A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 × 10 16 m - 3 . If the donor concentration level is 4.8 × 10 20 m - 3 , then the concentration of holes in the semiconductor is

Question

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 × 10 16 m - 3 . If the donor concentration level is 4.8 × 10 20 m - 3 , then the concentration of holes in the semiconductor is, 53 × 10 12 m - 3, 4 × 10 11 m - 3, 4 × 10 12 m - 3, 5.3 × 10 11 m - 3

MARKS App · Accepted Answer

Given, n 1 = 1.6 × 10 16 m - 3 n e = 4.8 × 10 20 m - 3 n h = ? The concentration of holes in the semiconductor is given by the expression, n 1 2 = n e × n h 1.6 × 10 16 2 = 4.8 × 10 20 × n h n h = 2.56 × 10 32 4.8 × 10 20 = 5.3 × 10 11 m - 3

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