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An n-type and a p-type silicon semiconductor can be obtained by doping pure silicon with
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arsenic and boron respectively.
Since p-type semiconductor has holes as majority charge carriers, thus for obtaining a p-type semiconductor we have to dope pure silicon with acceptor elements of group III-A like aluminium, boron, gallium etc.
And n-type semiconductor has electrons as majority charge carriers, thus for obtaining a n-type semiconductor silicon should be doped with electron rich donor elements of V A group like phosphorous, arsenic, etc.
And n-type semiconductor has electrons as majority charge carriers, thus for obtaining a n-type semiconductor silicon should be doped with electron rich donor elements of V A group like phosphorous, arsenic, etc.
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