In a silicon crystal doped with 5 × 10²⁸ atoms/m³ of arsenic to form an 'n' type wafer, and 1 ppm concentration of boron is added on the surface to create a 'P' region, given that the intrinsic carrier concentration (n i ) is 1.5 × 10¹⁶ m⁻³, what is the density of holes in the 'n h ' region?

Question

In a silicon crystal doped with 5 × 10²⁸ atoms/m³ of arsenic to form an 'n' type wafer, and 1 ppm concentration of boron is added on the surface to create a 'P' region, given that the intrinsic carrier concentration (n i ) is 1.5 × 10¹⁶ m⁻³, what is the density of holes in the 'n h ' region?, 0.45 × 10¹⁶/m³, 0.45 × 10²⁸/m³, 0.45 × 10 10 /m³, 0.45 × 10²¹/m³

MARKS App · Accepted Answer

Correct Option is : (C) 0.45 × 10 10 /m³

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