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In case of p-n junction diode, the width of depletion region is
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Increased by reserve biasing
In case of p – n junction diode, when it is reserved biased, the reserve voltage supports the barrier potential and hence the width of the depletion layer increases.
In forward biasing, the width decreases as the forward voltage opposes the potential barrier.
The width of the depletion region increases, if the diode is further doped heavily as the movement of charge carrier decrease.
In forward biasing, the width decreases as the forward voltage opposes the potential barrier.
The width of the depletion region increases, if the diode is further doped heavily as the movement of charge carrier decrease.
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