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Which one of the following statement is false?
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Majority carriers in a n-type semiconductor are holes
p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge).
Majority charge carriers-holes
Minority charge carriers-electrons
n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor $(\mathrm{Ge})$.
Majority charge carriers-electrons
The resistance of intrinsic semiconductors decreases with increase of temperature.
Majority charge carriers-holes
Minority charge carriers-electrons
n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor $(\mathrm{Ge})$.
Majority charge carriers-electrons
The resistance of intrinsic semiconductors decreases with increase of temperature.
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