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$C$ and Si both have same lattice structure, having 4 bonding electrons in each. However, $C$ is insulator whereas $\mathrm{Si}$ is intrinsic semiconductor. This is because
PhysicsSemiconductorsNEETNEET 2012 (Screening)
Options:
  • A in case of $\mathrm{C}$, the valence band is not completely filled at absolute zero temperature
  • B in case of $C$, the conduction band is partly filled even at absolute zero temperature
  • C the four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of Si they lie in the third
  • D the four bonding electrons in the case of $\mathrm{C}$ lie in the third orbit, whereas for $\mathrm{Si}$ they lie in the fourth orbit
Solution:
1014 Upvotes Verified Answer
The correct answer is: the four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of Si they lie in the third
The four bonding electrons in the case of $C$ lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in $\mathrm{Si}$ as compared to $\mathrm{C}$.

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