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$C$ and Si both have same lattice structure, having 4 bonding electrons in each. However, $C$ is insulator whereas $\mathrm{Si}$ is intrinsic semiconductor. This is because
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the four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of Si they lie in the third
The four bonding electrons in the case of $C$ lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in $\mathrm{Si}$ as compared to $\mathrm{C}$.
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